Updated on 2021/05/27

写真a

 
Nishi Ryuji
 

Degree

  • Doctor (Engineering)   Thesis ( 1997.3   Osaka University )

Research Interests

  • Electron Optics

Research Areas

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Measurement engineering

Education

  • Osaka University   Department of Electronic Engineering   Graduated

    1986.4 - 1990.3

  • Osaka University   Department of Electronic Engineering   Master's Course   Completed

    1990.4 - 1992.3

Research History

  • Osaka University   Research Assistant

    1992.4 - 1998.3

  • Osaka University   Research Assistant

    1998.4 - 2003.3

  • Osaka University   Research Assistant

    2003.4 - 2004.10

  • Osaka University

    2004.11 - 2007.3

  • Osaka University   Associate Professor

    2007.4 - 2020.3

  • Osaka University

    2020.4 - 2021.3

  • Fukui University of Technology   Professor

    2020.4

▼display all

Qualification acquired

  • Gamma Ray Penetration Photography Work Chief Person

  • X-ray Work Chief Person

  • Chief Person of Radiation Handling (first and second kind)

  • Hygiene Engineering Hygiene Manager

 

Papers

  • Application of ultra-high voltage electron microscope tomography to 3D imaging of microtubules in neurites of cultured PC12 cells Reviewed

    T. Nishida, R. Yoshimura, R. Nishi, Y. Imoto, Y. Endo

    Journal of Microscopy   278 ( 1 )   42 - 48   2020.4

     More details

    Electron tomography methods using the conventional transmission electron microscope have been widely used to investigate the three-dimensional distribution patterns of various cellular structures including microtubules in neurites. Because the penetrating power of electrons depends on the section thickness and accelerating voltage, conventional TEM, having acceleration voltages up to 200 kV, is limited to sample thicknesses of 0.2 μm or less. In this paper, we show that the ultra-high voltage electron microscope (UHVEM), employing acceleration voltages of higher than 1000 kV (1 MV), allowed distinct reconstruction of the three-dimensional array of microtubules in a 0.7-μm-thick neurite section. The detailed structure of microtubules was more clearly reconstructed from a 0.7-μm-thick section at an accelerating voltage of 1 MV compared with a 1.0 μm section at 2 MV. Furthermore, the entire distribution of each microtubule in a neurite could be reconstructed from serial-section UHVEM tomography. Application of optimized UHVEM tomography will provide new insights, bridging the gap between the structure and function of widely-distributed cellular organelles such as microtubules for neurite outgrowth.

    Key words: microtubule, neurite, section thickness, electron tomography, ultra-high voltage electron microscope

  • Study on higher performance of imaging and observation system in ultrahigh voltage electron microscopy

    Ryuji Nishi

    1997.3